Samsung has developed the industry’s first eight gigabit
(Gb), low power double data rate 4 (LPDDR4), mobile DRAM.
The 8Gb LPDDR4 is fabricated on 20-nanometer (nm) class
process technology, and offers 1 gigabyte (GB) on a single die, which is the
largest density available for DRAM components today.
Overall, the new LPDDR4 interface will provide 50 percent higher performance than the fastest LPDDR3 or DDR3 memory while consuming approximately 40 percent less energy at 1.1 volts.
This development is positively positioning Samsung as a
leading mobile DRAM technology development and a the leader in mobile DRAM
market share with its 4Gb and 6Gb LPDDR3.
Young-Hyun Jun, executive vice
president, memory sales & marketing, Samsung Electronics said, “This
next-generation LPDDR4 DRAM will contribute
significantly to faster growth of the global mobile DRAM market,
which will soon comprise the largest share of the entire DRAM market. We will
continue introducing the most advanced mobile DRAM one step ahead of the rest
of the industry so that global OEMs can launch innovative mobile devices with
exceptional user convenience in the timeliest manner.”
Samsung’s new high-speed 8Gb
LPDDR4 mobile DRAM will provide the highest
level of density, performance and energy efficiency for mobile
memory applications, enabling end users to have faster, more responsive
applications, more advanced features, and higher resolution displays while
maximizing battery life.
With the new chip,
Samsung will focus on the premium mobile market including large screen UHD
smartphones, tablets and ultra-slim notebooks that offer four times the
resolution of full-HD imaging, and also on high-performance network systems.
Samsung is leading mobile DRAM
technology development and is the leader in mobile DRAM market share with its
4Gb and 6Gb LPDDR3.
It started offering the thinnest and smallest 3GB LPDDR3
(6Gb) package solutions in November and will provide its new 8Gb LPDDR4 DRAM in
2014. The 8Gb mobile DRAM chip will rapidly expand the market for high-density
DRAM in next-generation mobile devices.
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